Weak localization in monolayer and bilayer graphene

نویسندگان

  • K. Kechedzhi
  • E. McCann
  • V. I. Fal’ko
  • H. Suzuura
  • T. Ando
  • B. L. Altshuler
چکیده

We describe the weak localization correction to conductivity in ultrathin graphene films, taking into account disorder scattering and the influence of trigonal warping of the Fermi surface. A possible manifestation of the chiral nature of electrons in the localization properties is hampered by trigonal warping, resulting in a suppression of the weak anti-localization effect in monolayer graphene and of weak localization in bilayer graphene. Intervalley scattering due to atomically sharp scatterers in a realistic graphene sheet or by edges in a narrow wire tends to restore weak localization resulting in negative magnetoresistance in both materials.

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تاریخ انتشار 2007